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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3306
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER 2SK3306 PACKAGE Isolated TO-220 (MP-45F)
DESCRIPTION
The 2SK3306 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
* Low gate charge : 5 QG = 13 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 5.0 A) * Gate voltage rating : 30 V * Low on-state resistance : RDS(on) = 1.5 MAX. (VGS = 10 V, ID = 2.5 A) * Avalanche capability ratings * Isolated TO-220(MP-45F) package
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse)
Note1
VDSS VGSS(AC) ID(DC) ID(pulse) PT PT Tch Tstg
500 30 5 20 35 2.0 150 -55 to +150 5.0 125
V V A A W W C C A mJ
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW 10 s, Duty Cycle 1 % 2. Starting Tch = 25 C, VDD = 150 V, RG = 25 , VGS = 20 V 0 V
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D14004EJ2V0DS00 (2nd edition) Date Published January 2000 NS CP(K) Printed in Japan
The mark 5 shows major revised points.
(c)
1999
2SK3306
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTICS Drain Leakage Current SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 2.5 1.0 3.0 1.35 700 115 6 16 3 33 5.5 13 4 4.5 1.0 0.7 3.3 1.5 MIN. TYP. MAX. 100 100 3.5 UNIT TEST CONDITIONS VDS = 500 V, VGS = 0 V VGS = 30 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 2.5 A VGS = 10 V, ID = 2.5 A VDS = 10 V, VGS = 0 V, f = 1 MHz
A
nA V S pF pF pF ns ns ns ns nC nC nC V
5
Gate to Source Leakage Current Gate to Source Cut-off Voltage
5 5 5
Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
VDD = 150 V, ID = 2.5 A, VGS(on) = 10 V, RG = 10 , RL = 60
5 5 5 5
Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time
VDD = 400 V, VGS(on) = 10 V, ID = 5.0 A
IF = 5.0 A, VGS = 0 V IF = 5.0 A, VGS = 0 V, di/dt = 50 A / s
s C
5
Reverse Recovery Charge
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG VGS = 20 0 V BVDSS VDS VGS 0 50 L VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T. RL PG. RG VDD ID
90 % 90 %
VGS VGS
Wave Form
0
10 %
VGS(on)
90 %
IAS ID VDD
ID ID
Wave Form
0 10 %
10 %
= 1 s Duty Cycle 1 %
td(on) ton
tr td(off)
toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA 50 RL VDD
PG.
2
Data Sheet D14004EJ2V0DS00
2SK3306
TYPICAL CHARACTERISTICS(TA = 25 C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100
dT - Percentage of Rated Power - % PT - Total Power Dissipation - W
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 50 40
80
60 40
30
20
20
10
0
20
40
60
80
100 120
140
160
0
20
40
60
80
100 120
140
160
Tc - Case Temperature - C
Tc - Case Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed
FORWARD BIAS SAFE OPERATING AREA 100
d ite ) im V ) L 10 n (o =
S
10
=
ID - Drain Current - A
ID - Drain Current - A
ID (pulse) PW
10 0 s
10 V VGS = 20 V 8.0 V
10
RD t VG (a
S
10
s
8 6 4 2
ID (DC)
Po we rD
1m
1 10 0 m s 0 m s
s
1
iss
VGS = 6.0 V
ip
at
io
n
0.1 1
Tc = 25 C Single Pulse 10
Li
m
ite
d
100
1000
0
4
8
12
16
VDS - Drain to Source Voltage - V DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 1000 100
ID - Drain Current - A
VDS - Drain to Source Voltage - V
Pulsed
10 1 0.1 0.01 TA = -25 C 25 C 75 C 125 C
0.001 0 5 10 15 VGS - Gate to Source Voltage - V
Data Sheet D14004EJ2V0DS00
3
2SK3306
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(ch-C) (t) - Transient Thermal Resistance - C/W
100 Rth(ch-A) = 62.5 C/W
10 Rth(ch-C) = 3.57 C/W 1
0.1 Tc = 25 C Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000
PW - Pulse Width - s
IyfsI - Forward Transfer Admittance - S
10 TA = -25 C 25 C 75 C 125 C
RDS(on) - Drain to Source On-State Resistance - W
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 4.0
1
3.0 ID = 5.0 A 2.0 ID = 2.5 A
0.1
1.0
0.01 0.01
VDS = 10 V Pulsed 0.1 1 ID - Drain Current - A 10 100
0.0
Pulsed 0 5 10 15 20 25 VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-State Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 3.0
VGS(off) - Gate to Source Cut-off Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 4.0 VDS = 10 V ID = 1 mA 3.0
Pulsed
2.0
2.0
1.0
1.0
0 0.1
0.0
-50 0 50 100 150 200
1
10
ID - Drain Current - A
Tch - Channel Temperature - C
4
Data Sheet D14004EJ2V0DS00
2SK3306
RDS(on) - Drain to Source On-State Resistance - W
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 3.0 ID = 5.0 A 2.0 ID = 2.5 A 100 SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed
ISD - Diode Forward Current - A
10
1
VGS = 10 V VGS = 0 V
1.0
0.1
VGS = 10 V 0.0 -50 0 50 100 150
0.01 0.0
0.5
1.0
1.5
Tch - Channel Temperature - C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000
VSD - Source to Drain Voltage - V
SWITCHING CHARACTERISTICS 100
1 000
Ciss Coss
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
VGS = 0 V f = 1.0 MHz
tr td(off) td(on) tf
100
10
10
Crss
1 VDD = 150 V VGS = 10 V RG = 10 0.1 1 10 ID - Drain Current - A 100
1
0.1 1 10 100 1000 VDS - Drain to Source Voltage - V
0.1
REVERSE RECOVERY TIME vs. DRAIN CURRENT 2000 1800 800 di/dt = 100 A/s VGS = 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS ID = 5.0 A
1600 1400 1200 1000 800 600 400 200 0 0.1 1 10 100
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Time - ns
700 600 500 400 300 200 VDS 100 2 4 6 8 10 12 14 VDD = 400 V 250 V 125 V VGS
14 12 10 8 6 4 2
ID - Drain Current - A
Qg - Gate Charge - nC
Data Sheet D14004EJ2V0DS00
5
VGS - Gate to Source Voltage - V
2SK3306
SINGLE AVALANCHE ENERGY vs STARTING CHANNEL TEMPERATURE 150 ID(peak) = IAS RG = 25 VGS = 20 V 0 V VDD = 150 V EAS = 125 mJ 100 SINGLE AVALANCHE CURRENT vs INDUCTIVE LOAD RG = 25 VDD = 150 V VGS = 20 V 0 V Starting Tch = 25 C IAS = 5.0 A
EAS - Single Avalanche Energy - mJ
125 100 75 50 25 0
IAS - Single Avalanche Current - A
10
EAS
= 12
5m
J
1
25
50
75
100
125
150
175
0.1 1.00E-04
1.00E-03
1.00E-02
1.00E-01
Starting Tch - Starting Channel Temperature - C
L - Inductive Load - H
6
Data Sheet D14004EJ2V0DS00
2SK3306
PACKAGE DRAWING (Unit: mm)
Isolated TO-220(MP-45F)
10.00.3 4.50.2 3.20.2 2.70.2
EQUIVALENT CIRCUIT
Drain
15.00.3
30.1
12.00.2
Gate
Body Diode
40.2
13.5 MIN.
Source
0.70.1 2.54
1.30.2 1.50.2 2.54
2.50.1 0.650.1
1. Gate 2. Drain 3. Source 123
5
Remark
Strong electric field, when exposed to this device, cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
Data Sheet D14004EJ2V0DS00
7
2SK3306
* The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.
M7 98. 8

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